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| savantic semiconductor product specification silicon pnp power transistors 2SB1154 d escription with to-3pfa package complement to type 2sd1705 low collector saturation voltage satisfactory linearity of h fe applications for power switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current -10 a i cm collector current-peak -20 a t c =25 70 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1154 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-6a ;i b =-0.3a -0.5 v v cesat-2 collector-emitter saturation voltage i c =-10a ;i b =-1a -1.5 v v besat-1 base-emitter saturation voltage i c =-6a ;i b =-0.3a -1.5 v v besat-2 base-emitter saturation voltage i c =-10a ;i b =-1a -2.5 v i cbo collector cut-off current v cb =-100v; i e =0 -10 a i ebo emitter cut-off current v eb =-5v; i c =0 -50 a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe -2 dc current gain i c =-3a ; v ce =-2v 90 260 h fe -3 dc current gain i c =-6a ; v ce =-2v 30 f t transition frequency i c =-0.5a ; v ce =-10v;f=10mhz 30 mhz switching times t on turn-on time 0.5 s t stg storage time 1.0 s t f fall time i c =-6a ;i b1 =-i b2 =-0.6a v cc =-50v 0.2 s h fe-2 classifications q p 90-180 130-260 savantic semiconductor product specification 3 silicon pnp power transistors 2SB1154 package outline fig.2 outline dimensions (unindicated tolerance: 0.30mm) savantic semiconductor product specification 4 silicon pnp power transistors 2SB1154 |
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